AFN4190S mosfet equivalent, n-channel mosfet.
z 100V/15A,RDS(ON)=9.2mΩ@VGS=10V z 100V/10A,RDS(ON)=13mΩ@VGS=4.5V z Super high density cell design for extremely
low RDS (ON) z SOP-8P package design
Application
z Netwo.
Pin Description ( SOP-8P )
AFN4190S
100V N-Channel Enhancement Mode MOSFET
Features
z 100V/15A,RDS(ON)=9.2mΩ@VGS=10V z.
AFN4190S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial in.
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