AFN4422W Datasheet, Alfa-MOS

30V/ 6.8A,RDS(ON)=36mΩ@VGS=10V 30V/ 6.0A,RDS(ON)=40mΩ@VGS=4.5V 30V/ 5.2A,RDS(ON)=45mΩ@VGS=2.5V Super high density cell design for extremely low RDS (ON) SOP-8P package de.

Pin Description ( SOP-8P ) AFN4422W 30V N-Channel Enhancement Mode MOSFET Features 30V/ 6.8A,RDS(ON)=36mΩ@VGS=10V 30V/.