AFN4412W Datasheet | Alfa-MOS

Description AFN4412W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in mercial industrial surface mount applications. Pin Description ( SOP-8P ) 30V N-Channel Enhancement Mode MOSFET Features 30V/ 7.6A,RDS(ON)=35mΩ@VGS=10V 30V/ 6.2A,RDS(ON)=42mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) SOP-8P package design Application DC/DC Converter Load Switch CCFL Inverter Power Management in Notebook puter Pin Define Pin 1 2 3 4 5 6 7 8 Symbol S S S G D D D D Ordering Information Part Ordering No. Part Marking Package AFN4412WS8RG 4412W SOP-8P ϡʳ A Lot code ϡʳ B Date code ϡʳ AFN4412WS8RG : 13” Tape & Reel ; Pb- Free ; Halogen- Free ©Alfa-MOS Technology Corp. Rev.A Apr. 2012 Description Source Source Source Gate Drain Drain...