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AFN4412W - N-Channel MOSFET

This page provides the datasheet information for the AFN4412W, a member of the AFN4412W-Alfa N-Channel MOSFET family.

Description

AFN4412W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Features

  • 30V/ 7.6A,RDS(ON)=35mΩ@VGS=10V 30V/ 6.2A,RDS(ON)=42mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) SOP-8P package design.

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Datasheet Details

Part number AFN4412W
Manufacturer Alfa-MOS
File Size 576.31 KB
Description N-Channel MOSFET
Datasheet download datasheet AFN4412W Datasheet
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Alfa-MOS Technology General Description AFN4412W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( SOP-8P ) AFN4412W 30V N-Channel Enhancement Mode MOSFET Features 30V/ 7.6A,RDS(ON)=35mΩ@VGS=10V 30V/ 6.2A,RDS(ON)=42mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) SOP-8P package design Application DC/DC Converter Load Switch CCFL Inverter Power Management in Notebook Computer Pin Define Pin 1 2 3 4 5 6 7 8 Symbol S S S G D D D D Ordering Information Part Ordering No.
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