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AFN4422W - N-Channel MOSFET

This page provides the datasheet information for the AFN4422W, a member of the AFN4422W-Alfa N-Channel MOSFET family.

Description

AFN4422W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Features

  • 30V/ 6.8A,RDS(ON)=36mΩ@VGS=10V 30V/ 6.0A,RDS(ON)=40mΩ@VGS=4.5V 30V/ 5.2A,RDS(ON)=45mΩ@VGS=2.5V Super high density cell design for extremely low RDS (ON) SOP-8P package design.

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Datasheet Details

Part number AFN4422W
Manufacturer Alfa-MOS
File Size 576.89 KB
Description N-Channel MOSFET
Datasheet download datasheet AFN4422W Datasheet
Additional preview pages of the AFN4422W datasheet.

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Full PDF Text Transcription

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Alfa-MOS Technology General Description AFN4422W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( SOP-8P ) AFN4422W 30V N-Channel Enhancement Mode MOSFET Features 30V/ 6.8A,RDS(ON)=36mΩ@VGS=10V 30V/ 6.0A,RDS(ON)=40mΩ@VGS=4.5V 30V/ 5.2A,RDS(ON)=45mΩ@VGS=2.5V Super high density cell design for extremely low RDS (ON) SOP-8P package design Application DC/DC Converter Load Switch CCFL Inverter Power Management in Notebook Computer Pin Define Pin 1 2 3 4 5 6 7 8 Symbol S S S G D D D D Ordering Information Part Ordering No.
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