AFN4422W Datasheet | Alfa-MOS

Description AFN4422W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in mercial industrial surface mount applications. Pin Description ( SOP-8P ) 30V N-Channel Enhancement Mode MOSFET Features 30V/ 6.8A,RDS(ON)=36mΩ@VGS=10V 30V/ 6.0A,RDS(ON)=40mΩ@VGS=4.5V 30V/ 5.2A,RDS(ON)=45mΩ@VGS=2.5V Super high density cell design for extremely low RDS (ON) SOP-8P package design Application DC/DC Converter Load Switch CCFL Inverter Power Management in Notebook puter Pin Define Pin 1 2 3 4 5 6 7 8 Symbol S S S G D D D D Ordering Information Part Ordering No. Part Marking Package AFN4422WS8RG 4422W SOP-8P ϡʳ A Lot code ϡʳ B Date code ϡʳ AFN4422WS8RG : 13” Tape & Reel ; Pb- Free ; Halogen- Free ©Alfa-MOS Technology Corp. Rev.A July 2015 Description Source...