AFN4424W Datasheet | Alfa-MOS

Description AFN4424W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in mercial industrial surface mount applications. Pin Description ( SOP-8P ) 40V N-Channel Enhancement Mode MOSFET Features - ID=8A,RDS(ON)= 25mΩ@VGS=10V - ID=6A,RDS(ON)= 34mΩ@VGS=4.5V - Super high density cell design for extremely low RDS (ON) - SOP-8P package design Application - Full Bridge DC/DC Converter - LCD TV Inverter & AD/DC Inverter Systems. Pin Define Pin 1 2 3 4 5 6 7 8 Symbol S S S G D D D D Ordering Information Part Ordering No. Part Marking Package AFN4424WS8RG 4424W SOP-8P ※ A Lot code ※ B Date code ※ AFN4424WS8RG : 13” Tape & Reel ; Pb- Free ; Halogen - Free ©Alfa-MOS Technology Corp. Rev.C July 2023 Description Source Source Source Gate Drain Drain Drain Drain Unit Tape & Reel Quantity 2500 EA .alfa-mos. Page 1 Alfa-MOS Technology 40V N-Channel Enhancement Mode MOSFET ※ Absolute Maximum Ratings (TA=25℃ Unless otherwise noted) Drain-Source Voltage Gate - Source...