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Alfa-MOS

AFN4424W Datasheet Preview

AFN4424W Datasheet

N-Channel Enhancement Mode MOSFET

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Alfa-MOS
Technology
General Description
AFN4424W, N-Channel enhancement mode
MOSFET, uses Advanced Trench Technology
to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low
voltage power management, and low in-line
power loss are needed in commercial industrial
surface mount applications.
Pin Description ( SOP-8P )
AFN4424W
40V N-Channel
Enhancement Mode MOSFET
Features
40V/8A,RDS(ON)= 22m@VGS=10V
40V/6A,RDS(ON)= 28m@VGS=4.5V
Super high density cell design for extremely
low RDS (ON)
SOP-8P package design
Application
Full Bridge DC/DC Converter
LCD TV Inverter & AD/DC Inverter Systems.
Pin Define
Pin
1
2
3
4
5
6
7
8
Symbol
S
S
S
G
D
D
D
D
Ordering Information
Part Ordering No.
Part Marking
Package
AFN4424WS8RG
4424W
SOP-8P
ϡʳ A Lot code
ϡʳ B Date code
ϡʳ AFN4424WS8RG : 13” Tape & Reel ; Pb- Free ; Halogen- Free
©Alfa-MOS Technology Corp.
Rev.A Apr. 2012
Description
Source
Source
Source
Gate
Drain
Drain
Drain
Drain
Unit
Tape & Reel
Quantity
2500 EA
www.alfa-mos.com
Page 1




Alfa-MOS

AFN4424W Datasheet Preview

AFN4424W Datasheet

N-Channel Enhancement Mode MOSFET

No Preview Available !

Alfa-MOS
Technology
AFN4424W
40V N-Channel
Enhancement Mode MOSFET
ϡʳ Absolute Maximum Ratings
(TA=25к Unless otherwise noted)
Drain-Source Voltage
Gate –Source Voltage
Parameter
Continuous Drain Current(TJ=150к)
Pulsed Drain Current
Continuous Source Current(Diode Conduction)
Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Thermal Resistance-Junction to Ambient
TA=25к
TA=70к
TA=25к
TA=70к
Symbol
VDSS
VGSS
ID
IDM
IS
PD
TJ
TSTG
RθJA
Typical
40
±20
8
6
30
1.5
2.8
1.8
150
-55/150
62.5
Unit
V
V
A
A
A
W
к
к
к/W
Electrical Characteristics
(TA=25к Unless otherwise noted)
Static
Parameter
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
©Alfa-MOS Technology Corp.
Rev.A Apr. 2012
Symbol
Conditions
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gFS
VSD
VGS=0V,ID=250uA
VDS=VGS,ID=250uA
VDS=0V,VGS=±20V
VDS=32V,VGS=0V
VDS=32V,VGS=0V
TJ=85к
VDSЊ5V,VGS=10V
VGS=10V,ID=8A
VGS=4.5V,ID=6A
VDS=15V,ID=5.0A
IS=2A,VGS=0V
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDS=20V,VGS=4.5V
ID= 5A
VDS=20V,VGS=0V
f=1MHz
VDD=20V,RL=4
ID5.0A,VGEN=10V
RG=1
Min. Typ Max. Unit
40 V
1.5 3.0
±100 nA
1
10 uA
20 A
15
20
22
28
m
25 S
0.85 1.2 V
10 14
2.8 nC
3.2
850
110 pF
75
6 12
10
20
20
36
ns
6 12
www.alfa-mos.com
Page 2



Part Number AFN4424W
Description N-Channel Enhancement Mode MOSFET
Maker Alfa-MOS
Total Page 6 Pages
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