AFN4842WS mosfet equivalent, n-channel mosfet.
40V/10A,RDS(ON)= 18mΩ@VGS=10V 40V/ 8A,RDS(ON)= 22mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) SOP-8P package design
Application
Synchronous Rect.
Pin Description ( SOP-8P )
AFN4842WS
40V N-Channel Enhancement Mode MOSFET
Features
40V/10A,RDS(ON)= 18mΩ@VGS=10V 40V/.
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