AFN4804S Description
AFN4804S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in mercial industrial surface mount applications. Pin Description ( TO-252-2L ) AFN4804S 40V N-Channel Enhancement Mode MOSFET.
AFN4804S Key Features
- 40V/16A,RDS(ON)= 48mΩ@VGS=10V
- 40V/10A,RDS(ON)= 70mΩ@VGS=4.5V
- Super high density cell design for extremely
- TO-252-2L package design
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