AFN4822WS Datasheet | Alfa-MOS

Alfa-MOS Technology General Description AFN4822WS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in mercial industrial surface mount applications. Pin Description ( SOP-8P ) 30V N-Channel Enhancement Mode MOSFET Features 30V/6.0A,RDS(ON)=34mΩ@VGS=10V 30V/5.0A,RDS(ON)=44mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) SOP-8P package design Application DC/DC Converter Load Switch CCFL Inverter Power Management in Notebook puter Pin Define Pin 1 2 3 4 5 6 7 8 Symbol S S S G D...