AFN4808W - N-Channel MOSFET

This page provides the datasheet information for the AFN4808W, a member of the AFN4808W-Alfa N-Channel MOSFET family.

Product Overview

Alfa-MOS

Part number	AFN4808W
Manufacturer	Alfa-MOS
File Size	580.81 KB
Description	N-Channel MOSFET
Datasheet	AFN4808W Datasheet
Additional preview pages of the AFN4808W datasheet.

AFN4808W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

20V/6.2A,RDS(ON)=30mΩ@VGS=4.5V 20V/4.6A,RDS(ON)=35mΩ@VGS=2.5V 20V/3.8A,RDS(ON)=42mΩ@VGS=1.8V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability DFN2X3-8L package design.

Other Datasheets by Alfa-MOS

Published: Nov 24, 2018 |