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AFN4808W Datasheet N-channel MOSFET

Manufacturer: Alfa-MOS

Overview: Alfa-MOS Technology General.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

AFN4808W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, such as smart phone and notebook puter and other battery powered circuits, and low in-line power loss are needed in mercial industrial surface mount applications.

Pin Description ( DFN2X3-8L ) AFN4808W 20V N-Channel Enhancement Mode MOSFET

Key Features

  • 20V/6.2A,RDS(ON)=30mΩ@VGS=4.5V 20V/4.6A,RDS(ON)=35mΩ@VGS=2.5V 20V/3.8A,RDS(ON)=42mΩ@VGS=1.8V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability DFN2X3-8L package design.

More Datasheets from Alfa-MOS

Part Number Description
AFN4804 N-Channel Enhancement Mode MOSFET
AFN4804S 40V N-Channel MOSFET
AFN4822WS N-Channel MOSFET
AFN4840WS N-Channel MOSFET
AFN4842WS N-Channel MOSFET
AFN4848WS N-Channel MOSFET
AFN4850WS N-Channel MOSFET
AFN4874WS 60V N-Channel MOSFET
AFN4896W N-Channel MOSFET
AFN4048WS N-Channel MOSFET

AFN4808W Distributor