AFN4842WS - N-Channel MOSFET

This page provides the datasheet information for the AFN4842WS, a member of the AFN4842WS-Alfa N-Channel MOSFET family.

Product Overview

Alfa-MOS

Datasheet Details

Part number	AFN4842WS
Manufacturer	Alfa-MOS
File Size	419.32 KB
Description	N-Channel MOSFET
Datasheet	AFN4842WS Datasheet
Additional preview pages of the AFN4842WS datasheet.

AFN4842WS Product details

Description

AFN4842WS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Features

40V/10A,RDS(ON)= 18mΩ@VGS=10V 40V/ 8A,RDS(ON)= 22mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) SOP-8P package design.

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Published: Nov 26, 2018 |