AFN4944WS mosfet equivalent, n-channel mosfet.
30V/12A,RDS(ON)=14mΩ@VGS=10V 30V/10A,RDS(ON)=17mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) SOP-8P package design
Application
Low Current DC/DC .
Pin Description ( SOP-8P )
AFN4944WS
30V N-Channel Enhancement Mode MOSFET
Features
30V/12A,RDS(ON)=14mΩ@VGS=10V 30V/1.
AFN4944WS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial i.
Image gallery
Download