AFN4900W Datasheet | Alfa-MOS

Description AFN4900W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in mercial industrial surface mount applications. Pin Description ( SOP-8P ) 60V N-Channel Enhancement Mode MOSFET Features - ID=6.8A,RDS(ON)=100mΩ@VGS=10V - ID=5.6A,RDS(ON)=130mΩ@VGS=4.5V - Super high density cell design for extremely low RDS (ON) - SOP-8P package design Application - Motor and Load Control - AD/DC Inverter Systems. - Power Management in White LED System Pin Define Pin 1 2 3 4 5 6 7 8 Symbol S1 G1 S2 G2 D2 D2 D1 D1 Ordering Information Part Ordering No. Part Marking Package AFN4900WS8RG 4900W SOP-8P ※ A Lot code ※ B Date code ※ AFN4900WS8RG : 13” Tape & Reel ; Pb- Free ; Halogen - Free ©Alfa-MOS Technology Corp. Rev.B Oct. 2022 Description Source 1 Gate 1 Source 2 Gate 2 Drain 2 Drain 2 Drain 1 Drain 1 Unit Tape & Reel Quantity 2500 EA .alfa-mos. Page 1 Alfa-MOS Technology 60V N-Channel Enhancement Mode MOSFET Absolute Maximum Ratings (TA=25℃ Unless otherwise...