AFN4900W Description
AFN4900W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in mercial industrial surface mount applications. Pin Description ( SOP-8P ) AFN4900W 60V N-Channel Enhancement Mode MOSFET.
AFN4900W Key Features
- ID=6.8A,RDS(ON)=100mΩ@VGS=10V
- ID=5.6A,RDS(ON)=130mΩ@VGS=4.5V
- Super high density cell design for extremely
- SOP-8P package design
- Motor and Load Control
- AD/DC Inverter Systems
- Power Management in White LED System