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AFN4900W - 60V N-Channel MOSFET

This page provides the datasheet information for the AFN4900W, a member of the AFN4900W-Alfa 60V N-Channel MOSFET family.

Description

AFN4900W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Features

  • ID=6.8A,RDS(ON)=100mΩ@VGS=10V.
  • ID=5.6A,RDS(ON)=130mΩ@VGS=4.5V.
  • Super high density cell design for extremely low RDS (ON).
  • SOP-8P package design.

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Datasheet Details

Part number AFN4900W
Manufacturer Alfa-MOS
File Size 319.14 KB
Description 60V N-Channel MOSFET
Datasheet download datasheet AFN4900W Datasheet
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Full PDF Text Transcription

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Alfa-MOS Technology General Description AFN4900W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( SOP-8P ) AFN4900W 60V N-Channel Enhancement Mode MOSFET Features  ID=6.8A,RDS(ON)=100mΩ@VGS=10V  ID=5.6A,RDS(ON)=130mΩ@VGS=4.5V  Super high density cell design for extremely low RDS (ON)  SOP-8P package design Application  Motor and Load Control  AD/DC Inverter Systems.  Power Management in White LED System Pin Define Pin 1 2 3 4 5 6 7 8 Symbol S1 G1 S2 G2 D2 D2 D1 D1 Ordering Information Part Ordering No.
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