AFN4906W Datasheet | Alfa-MOS

Description AFN4906W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in mercial industrial surface mount applications. Pin Description ( SOP-8P ) 40V N-Channel Enhancement Mode MOSFET Features 40V/6.8A,RDS(ON)=52mΩ@VGS=10V 40V/5.6A,RDS(ON)=70mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) SOP-8P package design Application Low Current DC/DC Conversion Load Switch CCFL Inverter Power Management in Notebook puter Pin Define Pin 1 2 3 4 5 6 7 8 Symbol S1 G1 S2 G2 D2 D2 D1 D1 Ordering Information Part Ordering No. Part Marking Package AFN4906WS8RG 4906W SOP-8P ϡʳ A Lot code ϡʳ B Date code ϡʳ AFN4906WS8RG : 13” Tape & Reel ; Pb- Free ; Halogen- Free ©Alfa-MOS Technology Corp. Rev.A May 2014 Description Source 1 Gate 1 Source...