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AFN4922W - N-Channel MOSFET

This page provides the datasheet information for the AFN4922W, a member of the AFN4922W-Alfa N-Channel MOSFET family.

Description

AFN4922W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Features

  • 100V/2.0A,RDS(ON)=290mΩ@VGS=10V 100V/1.5A,RDS(ON)=300mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) SOP-8P package design.

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Datasheet Details

Part number AFN4922W
Manufacturer Alfa-MOS
File Size 582.52 KB
Description N-Channel MOSFET
Datasheet download datasheet AFN4922W Datasheet
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Alfa-MOS Technology General Description AFN4922W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( SOP-8P ) AFN4922W 100V N-Channel Enhancement Mode MOSFET Features 100V/2.0A,RDS(ON)=290mΩ@VGS=10V 100V/1.5A,RDS(ON)=300mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) SOP-8P package design Application Motor and Load Control AD/DC Inverter Systems. Power Management in White LED System Pin Define Pin 1 2 3 4 5 6 7 8 Symbol S1 G1 S2 G2 D2 D2 D1 D1 Ordering Information Part Ordering No.
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