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AFN4914WS - N-Channel MOSFET

Download the AFN4914WS datasheet PDF. This datasheet also covers the AFN4914WS-Alfa variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

AFN4914WS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Key Features

  • 40V/ 8A,RDS(ON)= 18mΩ@VGS=10V 40V/ 6A,RDS(ON)= 22mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) SOP-8P package design.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AFN4914WS-Alfa-MOS.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number AFN4914WS
Manufacturer Alfa-MOS
File Size 423.74 KB
Description N-Channel MOSFET
Datasheet download datasheet AFN4914WS Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Alfa-MOS Technology General Description AFN4914WS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( SOP-8P ) AFN4914WS 40V N-Channel Enhancement Mode MOSFET Features 40V/ 8A,RDS(ON)= 18mΩ@VGS=10V 40V/ 6A,RDS(ON)= 22mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) SOP-8P package design Application Synchronous Rectification CCFL Inverter Car Charger POL, IBC - Secondary Side Pin Define Pin 1 2 3 4 5 6 7 8 Symbol S1 G1 S2 G2 D2 D2 D1 D1 Ordering Information Part Ordering No.