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AFN4914WS - N-Channel MOSFET

This page provides the datasheet information for the AFN4914WS, a member of the AFN4914WS-Alfa N-Channel MOSFET family.

Description

AFN4914WS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Features

  • 40V/ 8A,RDS(ON)= 18mΩ@VGS=10V 40V/ 6A,RDS(ON)= 22mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) SOP-8P package design.

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Datasheet Details

Part number AFN4914WS
Manufacturer Alfa-MOS
File Size 423.74 KB
Description N-Channel MOSFET
Datasheet download datasheet AFN4914WS Datasheet
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Alfa-MOS Technology General Description AFN4914WS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( SOP-8P ) AFN4914WS 40V N-Channel Enhancement Mode MOSFET Features 40V/ 8A,RDS(ON)= 18mΩ@VGS=10V 40V/ 6A,RDS(ON)= 22mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) SOP-8P package design Application Synchronous Rectification CCFL Inverter Car Charger POL, IBC - Secondary Side Pin Define Pin 1 2 3 4 5 6 7 8 Symbol S1 G1 S2 G2 D2 D2 D1 D1 Ordering Information Part Ordering No.
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