AFN9972S - N-Channel Enhancement Mode MOSFET

This page provides the datasheet information for the AFN9972S, a member of the AFN9972S-Alfa N-Channel Enhancement Mode MOSFET family.

Product Overview

Alfa-MOS

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Datasheet Details

Part number	AFN9972S
Manufacturer	Alfa-MOS
File Size	847.62 KB
Description	N-Channel Enhancement Mode MOSFET
Datasheet	AFN9972S Datasheet
Additional preview pages of the AFN9972S datasheet.

AFN9972S Product details

Description

AFN9972S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Features

60V/35A,RDS(ON)= 15mΩ@VGS=10V 60V/25A,RDS(ON)= 18mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) TO-252-2L package design Pin.

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Published: Dec 6, 2018 |