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AFN9977 - N-Channel Enhancement Mode MOSFET

Download the AFN9977 datasheet PDF. This datasheet also covers the AFN9977-Alfa variant, as both devices belong to the same n-channel enhancement mode mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

AFN9977, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Features

  • 60V/8A,RDS(ON)= 118mΩ@VGS=10V 60V/6A,RDS(ON)= 130mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) TO-252-2L package design Pin.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AFN9977-Alfa-MOS.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number AFN9977
Manufacturer Alfa-MOS
File Size 772.81 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet AFN9977 Datasheet

Full PDF Text Transcription

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Alfa-MOS Technology AFN9977 60V N-Channel Enhancement Mode MOSFET General Description AFN9977, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Features 60V/8A,RDS(ON)= 118mΩ@VGS=10V 60V/6A,RDS(ON)= 130mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) TO-252-2L package design Pin Description ( TO-252-2L ) Application Motor and Load Control Power Management in White LED System Push Pull Converter LCD TV Inverter & AD/DC Inverter Systems. Pin Define Pin 1 2 3 Symbol G S D Ordering Information Part Ordering No.
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