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AFN9972S - N-Channel Enhancement Mode MOSFET

This page provides the datasheet information for the AFN9972S, a member of the AFN9972S-Alfa N-Channel Enhancement Mode MOSFET family.

Description

AFN9972S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Features

  • 60V/35A,RDS(ON)= 15mΩ@VGS=10V 60V/25A,RDS(ON)= 18mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) TO-252-2L package design Pin.

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Datasheet preview – AFN9972S

Datasheet Details

Part number AFN9972S
Manufacturer Alfa-MOS
File Size 847.62 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet AFN9972S Datasheet
Additional preview pages of the AFN9972S datasheet.

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Full PDF Text Transcription

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Alfa-MOS Technology AFN9972S 60V N-Channel Enhancement Mode MOSFET General Description AFN9972S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Features 60V/35A,RDS(ON)= 15mΩ@VGS=10V 60V/25A,RDS(ON)= 18mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) TO-252-2L package design Pin Description ( TO-252-2L ) Application Motor and Load Control Power Management in White LED System Push Pull Converter LCD TV Inverter & AD/DC Inverter Systems. Pin Define Pin 1 2 3 Symbol G S D Ordering Information Part Ordering No.
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