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AFN9910 - N-Channel Enhancement Mode MOSFET

This page provides the datasheet information for the AFN9910, a member of the AFN9910-Alfa N-Channel Enhancement Mode MOSFET family.

Description

AFN9910, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Features

  • 100V/4A,RDS(ON)= 320mΩ@VGS=10V 100V/4A,RDS(ON)= 340mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) TO-252-2L package design Pin.

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Datasheet Details

Part number AFN9910
Manufacturer Alfa-MOS
File Size 838.62 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet AFN9910 Datasheet
Additional preview pages of the AFN9910 datasheet.

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Full PDF Text Transcription

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Alfa-MOS Technology AFN9910 100V N-Channel Enhancement Mode MOSFET General Description AFN9910, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Features 100V/4A,RDS(ON)= 320mΩ@VGS=10V 100V/4A,RDS(ON)= 340mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) TO-252-2L package design Pin Description ( TO-252-2L ) Application High Frequency Boost Converter LED Backlight for LCD TV Pin Define Pin 1 2 3 Symbol G S D Ordering Information Part Ordering No.
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