AFN9977 mosfet equivalent, n-channel enhancement mode mosfet.
60V/8A,RDS(ON)= 118mΩ@VGS=10V 60V/6A,RDS(ON)= 130mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) TO-252-2L package design
Pin Description ( TO-252-.
Features
60V/8A,RDS(ON)= 118mΩ@VGS=10V 60V/6A,RDS(ON)= 130mΩ@VGS=4.5V Super high density cell design for extremely low.
AFN9977, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial ind.
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