AFN9997
AFN9997 is N-Channel Enhancement Mode MOSFET manufactured by Alfa-MOS.
- Part of the AFN9997-Alfa comparator family.
- Part of the AFN9997-Alfa comparator family.
Alfa-MOS
Technology
100V N-Channel Enhancement Mode MOSFET
General Description
AFN9997, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in mercial industrial surface mount applications.
Features
- 100V/8A,RDS(ON)= 120mΩ@VGS=10V
- 100V/6A,RDS(ON)= 125mΩ@VGS=4.5V
- Super high density cell design for extremely low
RDS (ON)
- TO-252-2L package design
Pin Description ( TO-252-2L )
Application
- High Frequency Boost Converter
- LED Backlight for LCD TV
Pin Define
Pin 1 2 3
Symbol G S D
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