AFN9997 - N-Channel Enhancement Mode MOSFET

This page provides the datasheet information for the AFN9997, a member of the AFN9997-Alfa N-Channel Enhancement Mode MOSFET family.

Product Overview

Alfa-MOS

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Datasheet Details

Part number	AFN9997
Manufacturer	Alfa-MOS
File Size	518.28 KB
Description	N-Channel Enhancement Mode MOSFET
Datasheet	AFN9997 Datasheet
Additional preview pages of the AFN9997 datasheet.

AFN9997 Product details

Description

AFN9997, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Features

100V/8A,RDS(ON)= 120mΩ@VGS=10V.
100V/6A,RDS(ON)= 125mΩ@VGS=4.5V.
Super high density cell design for extremely low RDS (ON).
TO-252-2L package design Pin.

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Published: Dec 6, 2018 |