Alfa-MOS AFN9995S
N-Channel Enhancement Mode MOSFET
| Part No. | AFN9995S |
|---|---|
| Datasheet | AFN9995S Download |
| Manufacturer |  Alfa-MOS |
| Description | N-Channel Enhancement Mode MOSFET |
| Buy | Stock & Price |
GENERAL DESCRIPTION
AFN9995S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.FEATURES
100V/20A,RDS(ON)= 45mΩ@VGS=10V 100V/16A,RDS(ON)= 50mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) TO-252-2L package design PinDESCRIPTION
( TO-252-2L ) Application High Frequency Boost Converter LED Backlight for LCD TV Pin Define Pin 1 2 3 Symbol G S D Ordering Information Part Ordering No. Part Marking Package AFN9995ST252RG 9995S TO-252-2L ϡʳ A Lot code ϡʳ B Date code ϡʳ AFN9995ST252RG : 13” Tape & Reel ; Pb- Free ; Halogen- Free ©Alfa-MOS Technology Corp. Rev.A Aug. 2012DESCRIPTION
Gate Source Drain Unit Tape & Reel Quantity 2500 EA
