AFN9995S Datasheet N-Channel Enhancement Mode MOSFET

Manufacturer: Alfa-MOS

Download the AFN9995S datasheet PDF. This datasheet also includes the AFN9995S-Alfa variant, as both parts are published together in a single manufacturer document.

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AFN9995S n-channel enhancement mode mosfet by Alfa-MOS - Datasheet Preview — Note: The manufacturer provides a single datasheet file (AFN9995S-Alfa-MOS.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	AFN9995S
Manufacturer	Alfa-MOS
File Size	829.74 KB
Description	N-Channel Enhancement Mode MOSFET
Download	AFN9995S Download (PDF)

General Description

AFN9995S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Overview

Alfa-MOS Technology AFN9995S 100V N-Channel Enhancement Mode MOSFET.

Key Features

100V/20A,RDS(ON)= 45mΩ@VGS=10V 100V/16A,RDS(ON)= 50mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) TO-252-2L package design Pin.

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