AFN9997 Datasheet N-Channel Enhancement Mode MOSFET

Manufacturer: Alfa-MOS

Download the AFN9997 datasheet PDF. This datasheet also includes the AFN9997-Alfa variant, as both parts are published together in a single manufacturer document.

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AFN9997 n-channel enhancement mode mosfet by Alfa-MOS - Datasheet Preview — Note: The manufacturer provides a single datasheet file (AFN9997-Alfa-MOS.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	AFN9997
Manufacturer	Alfa-MOS
File Size	518.28 KB
Description	N-Channel Enhancement Mode MOSFET
Download	AFN9997 Download (PDF)

General Description

AFN9997, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Overview

Alfa-MOS Technology AFN9997 100V N-Channel Enhancement Mode MOSFET.

Key Features

100V/8A,RDS(ON)= 120mΩ@VGS=10V.
100V/6A,RDS(ON)= 125mΩ@VGS=4.5V.
Super high density cell design for extremely low RDS (ON).
TO-252-2L package design Pin.

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