AFN9997 Description
AFN9997, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in mercial industrial surface mount applications.
AFN9997 Key Features
- 100V/8A,RDS(ON)= 120mΩ@VGS=10V
- 100V/6A,RDS(ON)= 125mΩ@VGS=4.5V
- Super high density cell design for extremely low
- TO-252-2L package design
- High Frequency Boost Converter
- LED Backlight for LCD TV