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AFN9997 - N-Channel Enhancement Mode MOSFET

This page provides the datasheet information for the AFN9997, a member of the AFN9997-Alfa N-Channel Enhancement Mode MOSFET family.

Description

AFN9997, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Features

  • 100V/8A,RDS(ON)= 120mΩ@VGS=10V.
  • 100V/6A,RDS(ON)= 125mΩ@VGS=4.5V.
  • Super high density cell design for extremely low RDS (ON).
  • TO-252-2L package design Pin.

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Datasheet preview – AFN9997

Datasheet Details

Part number AFN9997
Manufacturer Alfa-MOS
File Size 518.28 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet AFN9997 Datasheet
Additional preview pages of the AFN9997 datasheet.

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Full PDF Text Transcription

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Alfa-MOS Technology AFN9997 100V N-Channel Enhancement Mode MOSFET General Description AFN9997, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Features  100V/8A,RDS(ON)= 120mΩ@VGS=10V  100V/6A,RDS(ON)= 125mΩ@VGS=4.5V  Super high density cell design for extremely low RDS (ON)  TO-252-2L package design Pin Description ( TO-252-2L ) Application  High Frequency Boost Converter  LED Backlight for LCD TV Pin Define Pin 1 2 3 Symbol G S D Ordering Information Part Ordering No.
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