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AFP1073E - P-Channel MOSFET

Download the AFP1073E datasheet PDF. This datasheet also covers the AFP1073E-Alfa variant, as both devices belong to the same p-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

AFP1073E, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

Key Features

  • -20V/-0.6A, RDS(ON)= 620 mΩ@ VGS =-4.5V -20V/-0.5A, RDS(ON)= 860 mΩ@ VGS =-2.5V -20V/-0.4A, RDS(ON)= 1250 mΩ@ VGS =-1.8V Low Offset (Error) Voltage Low-Voltage Operation High-Speed Circuits ESD Protection ( >2KV ) Diode design.
  • in Low Battery Voltage Operation SOT-723 package design.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AFP1073E-Alfa-MOS.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number AFP1073E
Manufacturer Alfa-MOS
File Size 670.45 KB
Description P-Channel MOSFET
Datasheet download datasheet AFP1073E Datasheet

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Other Datasheets by Alfa-MOS

Part Number Description
AFP1073 P-Channel MOSFET
AFP1013 P-Channel MOSFET
AFP1013E P-Channel MOSFET
AFP1023 P-Channel MOSFET
AFP1023E P-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Alfa-MOS Technology General Description AFP1073E, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( SOT-723 ) AFP1073E 20V P-Channel Enhancement Mode MOSFET Features -20V/-0.6A, RDS(ON)= 620 mΩ@ VGS =-4.5V -20V/-0.5A, RDS(ON)= 860 mΩ@ VGS =-2.5V -20V/-0.4A, RDS(ON)= 1250 mΩ@ VGS =-1.