AFP1073E Datasheet - Alfa-MOS

P-Channel MOSFET

AFP1073E Features

* -20V/-0.6A, RDS(ON)= 620 mΩ@ VGS =-4.5V -20V/-0.5A, RDS(ON)= 860 mΩ@ VGS =-2.5V -20V/-0.4A, RDS(ON)= 1250 mΩ@ VGS =-1.8V Low Offset (Error) Voltage Low-Voltage Operation High-Speed Circuits ESD Protection ( >2KV ) Diode design

* in Low Battery Voltage Operation SOT-723 package design Applicat

AFP1073E General Description

AFP1073E, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer, and low in-line power loss are needed in commercial industria.

AFP1073E Datasheet (670.45 KB)

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Datasheet Details

Part number:

AFP1073E

Manufacturer:

Alfa-MOS

File Size:

670.45 KB

Description:

P-channel mosfet.

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AFP1073E P-Channel MOSFET Alfa-MOS

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AFP1073E Features

AFP1073E General Description

Datasheet Details

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Description:

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