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AFP1303 - P-Channel Enhancement Mode MOSFET

Download the AFP1303 datasheet PDF. This datasheet also covers the AFP1303-Alfa variant, as both devices belong to the same p-channel enhancement mode mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

AFP1303, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

Key Features

  • -20V/-0.45A, RDS(ON)= 600 mΩ@ VGS =-4.5V -20V/-0.35A, RDS(ON)= 800 mΩ@ VGS =-2.5V -20V/-0.25A, RDS(ON)= 1300 mΩ@ VGS =-1.8V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-323 package design.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AFP1303-Alfa-MOS.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number AFP1303
Manufacturer Alfa-MOS
File Size 580.72 KB
Description P-Channel Enhancement Mode MOSFET
Datasheet download datasheet AFP1303 Datasheet

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Other Datasheets by Alfa-MOS

Part Number Description
AFP1013 P-Channel MOSFET
AFP1013E P-Channel MOSFET
AFP1023 P-Channel MOSFET
AFP1023E P-Channel MOSFET
AFP1033 P-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Alfa-MOS Technology AFP1303 20V P-Channel Enhancement Mode MOSFET General Description AFP1303, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( SOT-323 ) Features -20V/-0.45A, RDS(ON)= 600 mΩ@ VGS =-4.5V -20V/-0.35A, RDS(ON)= 800 mΩ@ VGS =-2.5V -20V/-0.25A, RDS(ON)= 1300 mΩ@ VGS =-1.