AFP1303 Datasheet, Alfa-MOS

-20V/-0.45A, RDS(ON)= 600 mΩ@ VGS =-4.5V -20V/-0.35A, RDS(ON)= 800 mΩ@ VGS =-2.5V -20V/-0.25A, RDS(ON)= 1300 mΩ@ VGS =-1.8V Super high density cell design for extremely l.

Pin Description ( SOT-323 ) Features -20V/-0.45A, RDS(ON)= 600 mΩ@ VGS =-4.5V -20V/-0.35A, RDS(ON)= 800 mΩ@ VGS =-2.5V.

AFP1303, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other bat.