AFP1601E Datasheet, Alfa-MOS

-20V/-0.4A, RDS(ON)= 580 mΩ@ VGS =-4.5V -20V/-0.3A, RDS(ON)= 680 mΩ@ VGS =-2.5V -20V/-0.1A, RDS(ON)= 950 mΩ@ VGS =-1.8V Low Offset (Error) Voltage Low-Voltage Operation H.

Pin Description ( DFN1.0X0.6-3L ) AFP1601E 20V P-Channel Enhancement Mode MOSFET Features -20V/-0.4A, RDS(ON)= 580 mΩ@.

AFP1601E, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer, and low in-.