Datasheet4U Logo Datasheet4U.com

AFP1601E - 20V P-Channel Enhancement Mode MOSFET

Download the AFP1601E datasheet PDF. This datasheet also covers the AFP1601E-Alfa variant, as both devices belong to the same 20v p-channel enhancement mode mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

AFP1601E, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

Key Features

  • -20V/-0.4A, RDS(ON)= 580 mΩ@ VGS =-4.5V -20V/-0.3A, RDS(ON)= 680 mΩ@ VGS =-2.5V -20V/-0.1A, RDS(ON)= 950 mΩ@ VGS =-1.8V Low Offset (Error) Voltage Low-Voltage Operation High-Speed Circuits ESD Protection Diode design.
  • in Low Battery Voltage Operation DFN1.0X0.6-3L package design.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AFP1601E-Alfa-MOS.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number AFP1601E
Manufacturer Alfa-MOS
File Size 774.26 KB
Description 20V P-Channel Enhancement Mode MOSFET
Datasheet download datasheet AFP1601E Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
AFP02N8-000 General Purpose PHEMT Chip Alpha Industries
AFP02N8-212 General Purpose Packaged PHEMT Chips Alpha Industries
AFP02N8-213 General Purpose Packaged PHEMT Chips Alpha Industries
AFP2303AS23RG P-Channel MOSFET VBsemi
AFP2319AS23RG P-Channel MOSFET VBsemi

Other Datasheets by Alfa-MOS

Part Number Description
AFP1013 P-Channel MOSFET
AFP1013E P-Channel MOSFET
AFP1023 P-Channel MOSFET
AFP1023E P-Channel MOSFET
AFP1033 P-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Alfa-MOS Technology General Description AFP1601E, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( DFN1.0X0.6-3L ) AFP1601E 20V P-Channel Enhancement Mode MOSFET Features -20V/-0.4A, RDS(ON)= 580 mΩ@ VGS =-4.5V -20V/-0.3A, RDS(ON)= 680 mΩ@ VGS =-2.5V -20V/-0.1A, RDS(ON)= 950 mΩ@ VGS =-1.8V Low Offset (Error) Voltage Low-Voltage Operation High-Speed Circuits ESD Protection Diode design–in Low Battery Voltage Operation DFN1.0X0.