AFP1806WS mosfet equivalent, p-channel mosfet.
z -100/-5.0A,RDS(ON)= 95mΩ@VGS= -10V z -100/-3.5A,RDS(ON)= 105mΩ@VGS= -4.5V z Super high density cell design for extremely
low RDS (ON) z SOP-8P package design
Applicati.
Pin Description ( SOP-8P )
AFP1806WS
100V P-Channel Enhancement Mode MOSFET
Features
z -100/-5.0A,RDS(ON)= 95mΩ@VGS= -.
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