AFP1810 Datasheet | Alfa-MOS

Description AFP1810, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in mercial industrial surface mount applications. Pin Description ( SOP-8P ) 100V P-Channel Enhancement Mode MOSFET Features -100/-2.0A,RDS(ON)= 230mΩ@VGS= -10V -100/-1.0A,RDS(ON)= 245mΩ@VGS= -4.5V Super high density cell design for extremely low RDS (ON) SOP-8P package design Application Full Bridge DC/DC Converter Load Switch Pin Define Pin 1 2 3 4 5 6 7 8 Symbol S S S G D D D D Ordering Information Part Ordering No. Part Marking Package AFP1810S8RG SOP-8P ϡʳ A Lot code ϡʳ B Date code ϡʳ AFP1810S8RG : 13” Tape & Reel ; Pb- Free ; Halogen- Free ©Alfa-MOS Technology Corp. Rev.A Apr. 2013 Description Source Source Source Gate Drain Drain Drain Drain Unit Tape &...