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AFP1810 - P-Channel MOSFET

This page provides the datasheet information for the AFP1810, a member of the AFP1810-Alfa P-Channel MOSFET family.

Description

AFP1810, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Features

  • -100/-2.0A,RDS(ON)= 230mΩ@VGS= -10V -100/-1.0A,RDS(ON)= 245mΩ@VGS= -4.5V Super high density cell design for extremely low RDS (ON) SOP-8P package design.

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Datasheet Details

Part number AFP1810
Manufacturer Alfa-MOS
File Size 550.87 KB
Description P-Channel MOSFET
Datasheet download datasheet AFP1810 Datasheet
Additional preview pages of the AFP1810 datasheet.

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Full PDF Text Transcription

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Alfa-MOS Technology General Description AFP1810, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( SOP-8P ) AFP1810 100V P-Channel Enhancement Mode MOSFET Features -100/-2.0A,RDS(ON)= 230mΩ@VGS= -10V -100/-1.0A,RDS(ON)= 245mΩ@VGS= -4.5V Super high density cell design for extremely low RDS (ON) SOP-8P package design Application Full Bridge DC/DC Converter Load Switch Pin Define Pin 1 2 3 4 5 6 7 8 Symbol S S S G D D D D Ordering Information Part Ordering No.
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