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AFP1806WS - P-Channel MOSFET

This page provides the datasheet information for the AFP1806WS, a member of the AFP1806WS-Alfa P-Channel MOSFET family.

Description

AFP1806WS, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Features

  • z -100/-5.0A,RDS(ON)= 95mΩ@VGS= -10V z -100/-3.5A,RDS(ON)= 105mΩ@VGS= -4.5V z Super high density cell design for extremely low RDS (ON) z SOP-8P package design.

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Datasheet Details

Part number AFP1806WS
Manufacturer Alfa-MOS
File Size 526.94 KB
Description P-Channel MOSFET
Datasheet download datasheet AFP1806WS Datasheet
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Alfa-MOS Technology General Description AFP1806WS, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( SOP-8P ) AFP1806WS 100V P-Channel Enhancement Mode MOSFET Features z -100/-5.0A,RDS(ON)= 95mΩ@VGS= -10V z -100/-3.5A,RDS(ON)= 105mΩ@VGS= -4.5V z Super high density cell design for extremely low RDS (ON) z SOP-8P package design Application z Full Bridge DC/DC Converter z Load Switch Pin Define Pin 1 2 3 4 5 6 7 8 Symbol S S S G D D D D Ordering Information Part Ordering No.
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