AFP1806WS Datasheet | Alfa-MOS

Description AFP1806WS, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in mercial industrial surface mount applications. Pin Description ( SOP-8P ) 100V P-Channel Enhancement Mode MOSFET Features z -100/-5.0A,RDS(ON)= 95mΩ@VGS= -10V z -100/-3.5A,RDS(ON)= 105mΩ@VGS= -4.5V z Super high density cell design for extremely low RDS (ON) z SOP-8P package design Application z Full Bridge DC/DC Converter z Load Switch Pin Define Pin 1 2 3 4 5 6 7 8 Symbol S S S G D D D D Ordering Information Part Ordering No. Part Marking Package AFP1806WSS8RG 1806WS SOP-8P ※ A Lot code ※ B Date code ※ AFP1806WSS8RG : 13” Tape & Reel ; Pb- Free ; Halogen - Free ©Alfa-MOS Technology Corp. Rev.A Jan. 2018 Description Source Source Source Gate Drain Drain Drain...