AFP2421WS mosfet equivalent, p-channel enhancement mode mosfet.
z -30V/-5.3A,RDS(ON)=30mΩ@VGS=-10V z -30V/-4.2A,RDS(ON)=40mΩ@VGS=-4.5V z Super high density cell design for extremely
low RDS (ON) z Exceptional on-resistance and maximum.
Pin Description ( DFN2X2-6L )
AFP2421WS
30V P-Channel Enhancement Mode MOSFET
Features
z -30V/-5.3A,RDS(ON)=30mΩ@VGS=-.
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