AFP3050S mosfet equivalent, p-channel enhancement mode mosfet.
-30V/-9A,RDS(ON)=60mΩ@VGS=-10V -30V/-7A,RDS(ON)=72mΩ@VGS=-4.5V -30V/-5A,RDS(ON)=108mΩ@VGS=-2.5V Super high density cell design for extremely low RDS (ON) TO-252-2L packag.
Pin Description ( TO-252-2L )
AFP3050S
30V P-Channel Enhancement Mode MOSFET
Features
-30V/-9A,RDS(ON)=60mΩ@VGS=-10V -.
AFP3050S, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial in.
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