AFP3050S - P-Channel Enhancement Mode MOSFET

This page provides the datasheet information for the AFP3050S, a member of the AFP3050S-Alfa P-Channel Enhancement Mode MOSFET family.

Product Overview

Alfa-MOS

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Datasheet Details

Part number	AFP3050S
Manufacturer	Alfa-MOS
File Size	849.17 KB
Description	P-Channel Enhancement Mode MOSFET
Datasheet	AFP3050S Datasheet
Additional preview pages of the AFP3050S datasheet.

AFP3050S Product details

Description

AFP3050S, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Features

-30V/-9A,RDS(ON)=60mΩ@VGS=-10V -30V/-7A,RDS(ON)=72mΩ@VGS=-4.5V -30V/-5A,RDS(ON)=108mΩ@VGS=-2.5V Super high density cell design for extremely low RDS (ON) TO-252-2L package design.

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Published: Dec 6, 2018 |