AFP3056WS Description
AFP3056WS, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in mercial industrial surface mount applications. Pin Description ( SOT-23-6L ) AFP3056WS 30V P-Channel Enhancement Mode MOSFET.
AFP3056WS Key Features
- ID= -5.0A,RDS(ON)=55mΩ@VGS=-10.0V
- ID= -4.0A,RDS(ON)=70mΩ@VGS=-4.5V
- Super high density cell design for extremely
- Exceptional on-resistance and maximum DC
- SOT-23-6L package design
- Power Management in Note book
- LED Display
- DC-DC System
- LCD Panel