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AFP3056WS - 30V P-Channel Enhancement Mode MOSFET

This page provides the datasheet information for the AFP3056WS, a member of the AFP3056WS-Alfa 30V P-Channel Enhancement Mode MOSFET family.

Description

AFP3056WS, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Features

  • ID= -5.0A,RDS(ON)=55mΩ@VGS=-10.0V.
  • ID= -4.0A,RDS(ON)=70mΩ@VGS=-4.5V.
  • Super high density cell design for extremely low RDS (ON).
  • Exceptional on-resistance and maximum DC current capability.
  • SOT-23-6L package design.

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Datasheet preview – AFP3056WS

Datasheet Details

Part number AFP3056WS
Manufacturer Alfa-MOS
File Size 446.12 KB
Description 30V P-Channel Enhancement Mode MOSFET
Datasheet download datasheet AFP3056WS Datasheet
Additional preview pages of the AFP3056WS datasheet.

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Full PDF Text Transcription

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Alfa-MOS Technology General Description AFP3056WS, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( SOT-23-6L ) AFP3056WS 30V P-Channel Enhancement Mode MOSFET Features  ID= -5.0A,RDS(ON)=55mΩ@VGS=-10.0V  ID= -4.0A,RDS(ON)=70mΩ@VGS=-4.
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