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AFP3056WS Datasheet 30v P-channel Enhancement Mode MOSFET

Manufacturer: Alfa-MOS

Overview: Alfa-MOS Technology General.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

AFP3056WS, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in mercial industrial surface mount applications.

Pin Description ( SOT-23-6L ) AFP3056WS 30V P-Channel Enhancement Mode MOSFET

Key Features

  • ID= -5.0A,RDS(ON)=55mΩ@VGS=-10.0V.
  • ID= -4.0A,RDS(ON)=70mΩ@VGS=-4.5V.
  • Super high density cell design for extremely low RDS (ON).
  • Exceptional on-resistance and maximum DC current capability.
  • SOT-23-6L package design.

More Datasheets from Alfa-MOS

Part Number Description
AFP3050S P-Channel Enhancement Mode MOSFET
AFP3401AS P-Channel MOSFET
AFP3401S P-Channel Enhancement Mode MOSFET
AFP3403A P-Channel MOSFET
AFP3405 P-Channel Enhancement Mode MOSFET
AFP3405AS P-Channel MOSFET
AFP3407AS P-Channel MOSFET
AFP3411 P-Channel MOSFET
AFP3413 P-Channel Enhancement Mode MOSFET
AFP3413A P-Channel MOSFET

AFP3056WS Distributor