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AFP3050S - P-Channel Enhancement Mode MOSFET

This page provides the datasheet information for the AFP3050S, a member of the AFP3050S-Alfa P-Channel Enhancement Mode MOSFET family.

Description

AFP3050S, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Features

  • -30V/-9A,RDS(ON)=60mΩ@VGS=-10V -30V/-7A,RDS(ON)=72mΩ@VGS=-4.5V -30V/-5A,RDS(ON)=108mΩ@VGS=-2.5V Super high density cell design for extremely low RDS (ON) TO-252-2L package design.

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Datasheet Details

Part number AFP3050S
Manufacturer Alfa-MOS
File Size 849.17 KB
Description P-Channel Enhancement Mode MOSFET
Datasheet download datasheet AFP3050S Datasheet
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Alfa-MOS Technology General Description AFP3050S, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( TO-252-2L ) AFP3050S 30V P-Channel Enhancement Mode MOSFET Features -30V/-9A,RDS(ON)=60mΩ@VGS=-10V -30V/-7A,RDS(ON)=72mΩ@VGS=-4.5V -30V/-5A,RDS(ON)=108mΩ@VGS=-2.5V Super high density cell design for extremely low RDS (ON) TO-252-2L package design Application LED Display Load Switch CCFL Inverter Power Management in Notebook Computer, Pin Define Pin 1 2 3 Symbol G S D Ordering Information Part Ordering No.
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