AFP3401S Datasheet, Alfa-MOS

-30V/-4.0A,RDS(ON)=65mΩ@VGS=-10.0V -30V/-3.2A,RDS(ON)=80mΩ@VGS=-4.5V -30V/-1.0A,RDS(ON)=105mΩ@VGS=-2.5V Super high density cell design for extremely low RDS (ON) SOT-23-3.

Pin Description ( SOT-23-3L ) AFP3401S 30V P-Channel Enhancement Mode MOSFET Features -30V/-4.0A,RDS(ON)=65mΩ@VGS=-10..