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AFP3435W - P-Channel MOSFET

Download the AFP3435W datasheet PDF. This datasheet also covers the AFP3435W-Alfa variant, as both devices belong to the same p-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

AFP3435W, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Key Features

  • -200V/-1.0A,RDS(ON)=2400 mΩ@VGS=-10V -200V/-0.6A,RDS(ON)=2600 mΩ@VGS=-4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability ESD Protection Diode design.
  • in SOT-23-6L package design.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AFP3435W-Alfa-MOS.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number AFP3435W
Manufacturer Alfa-MOS
File Size 582.80 KB
Description P-Channel MOSFET
Datasheet download datasheet AFP3435W Datasheet

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Other Datasheets by Alfa-MOS

Part Number Description
AFP3433WS P-Channel MOSFET
AFP3437W P-Channel MOSFET
AFP3439W P-Channel MOSFET
AFP3401AS P-Channel MOSFET
AFP3401S P-Channel Enhancement Mode MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Alfa-MOS Technology General Description AFP3435W, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( SOT-23-6L ) AFP3435W 200V P-Channel Enhancement Mode MOSFET Features -200V/-1.0A,RDS(ON)=2400 mΩ@VGS=-10V -200V/-0.6A,RDS(ON)=2600 mΩ@VGS=-4.