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AFP3439W - P-Channel MOSFET

Download the AFP3439W datasheet PDF. This datasheet also covers the AFP3439W-Alfa variant, as both devices belong to the same p-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

AFP3439W, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Features

  • -150V/-1.4A,RDS(ON)=800 mΩ@VGS=-10V -150V/-1.0A,RDS(ON)=850 mΩ@VGS=-6V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-23-6L package design.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AFP3439W-Alfa-MOS.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number AFP3439W
Manufacturer Alfa-MOS
File Size 567.15 KB
Description P-Channel MOSFET
Datasheet download datasheet AFP3439W Datasheet

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Other Datasheets by Alfa-MOS

Part Number Description
AFP3433WS P-Channel MOSFET
AFP3435W P-Channel MOSFET
AFP3437W P-Channel MOSFET
AFP3401AS P-Channel MOSFET
AFP3401S P-Channel Enhancement Mode MOSFET

Full PDF Text Transcription

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Alfa-MOS Technology General Description AFP3439W, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( SOT-23-6L ) AFP3439W 150V P-Channel Enhancement Mode MOSFET Features -150V/-1.4A,RDS(ON)=800 mΩ@VGS=-10V -150V/-1.
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