AFP3435W Datasheet | Alfa-MOS

Description AFP3435W, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in mercial industrial surface mount applications. Pin Description ( SOT-23-6L ) 200V P-Channel Enhancement Mode MOSFET Features -200V/-1.0A,RDS(ON)=2400 mΩ@VGS=-10V -200V/-0.6A,RDS(ON)=2600 mΩ@VGS=-4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability ESD Protection Diode design- in SOT-23-6L package design Application Active Clamp Circuits in DC/DC Power Supplies Pin Define Pin 1 2 3 4 5 6 Symbol D D G S D D Description Drain Drain Gate Source Drain Drain Ordering Information Part Ordering No. Part Marking Package AFP3435WS26RG 35WYW SOT-23-6L ϡʳ 35W parts code ϡʳ Y year code ( 0 ~ 9 ) ϡʳ W week code ( A ~ Z =...