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AFP3435W - P-Channel MOSFET

This page provides the datasheet information for the AFP3435W, a member of the AFP3435W-Alfa P-Channel MOSFET family.

Description

AFP3435W, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Features

  • -200V/-1.0A,RDS(ON)=2400 mΩ@VGS=-10V -200V/-0.6A,RDS(ON)=2600 mΩ@VGS=-4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability ESD Protection Diode design.
  • in SOT-23-6L package design.

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Datasheet preview – AFP3435W

Datasheet Details

Part number AFP3435W
Manufacturer Alfa-MOS
File Size 582.80 KB
Description P-Channel MOSFET
Datasheet download datasheet AFP3435W Datasheet
Additional preview pages of the AFP3435W datasheet.

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Full PDF Text Transcription

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Alfa-MOS Technology General Description AFP3435W, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( SOT-23-6L ) AFP3435W 200V P-Channel Enhancement Mode MOSFET Features -200V/-1.0A,RDS(ON)=2400 mΩ@VGS=-10V -200V/-0.6A,RDS(ON)=2600 mΩ@VGS=-4.
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