AFP3439W mosfet equivalent, p-channel mosfet.
-150V/-1.4A,RDS(ON)=800 mΩ@VGS=-10V -150V/-1.0A,RDS(ON)=850 mΩ@VGS=-6V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC .
Pin Description ( SOT-23-6L )
AFP3439W
150V P-Channel Enhancement Mode MOSFET
Features
-150V/-1.4A,RDS(ON)=800 mΩ@VGS=.
AFP3439W, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial in.
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