AFP3485 mosfet equivalent, p-channel enhancement mode mosfet.
-30V/ -12A,RDS(ON)=28mΩ@VGS=-10V -30V/ -10A,RDS(ON)=37mΩ@VGS=-4.5V Super high density cell design for extremely low RDS (ON) TO-252-2L package design
Application
Power M.
Pin Description ( TO-252-2L )
AFP3485
30V P-Channel Enhancement Mode MOSFET
Features
-30V/ -12A,RDS(ON)=28mΩ@VGS=-10V .
AFP3485, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial ind.
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