AFP3485 - P-Channel Enhancement Mode MOSFET

This page provides the datasheet information for the AFP3485, a member of the AFP3485-Alfa P-Channel Enhancement Mode MOSFET family.

Product Overview

Alfa-MOS

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Datasheet Details

Part number	AFP3485
Manufacturer	Alfa-MOS
File Size	756.02 KB
Description	P-Channel Enhancement Mode MOSFET
Datasheet	AFP3485 Datasheet
Additional preview pages of the AFP3485 datasheet.

AFP3485 Product details

Description

AFP3485, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Features

-30V/ -12A,RDS(ON)=28mΩ@VGS=-10V -30V/ -10A,RDS(ON)=37mΩ@VGS=-4.5V Super high density cell design for extremely low RDS (ON) TO-252-2L package design.

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Published: Dec 6, 2018 |