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AFP3481S - P-Channel MOSFET

This page provides the datasheet information for the AFP3481S, a member of the AFP3481S-Alfa P-Channel MOSFET family.

Description

AFP3481S, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Features

  • -30V/-5.4A,RDS(ON)=62mΩ@VGS=-10.0V -30V/-4.2A,RDS(ON)=90mΩ@VGS=-4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability TSOT-23-6L package design.

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Datasheet Details

Part number AFP3481S
Manufacturer Alfa-MOS
File Size 644.27 KB
Description P-Channel MOSFET
Datasheet download datasheet AFP3481S Datasheet
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Alfa-MOS Technology General Description AFP3481S, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( TSOT-23-6L ) AFP3481S 30V P-Channel Enhancement Mode MOSFET Features -30V/-5.4A,RDS(ON)=62mΩ@VGS=-10.0V -30V/-4.2A,RDS(ON)=90mΩ@VGS=-4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability TSOT-23-6L package design Application Power Management in Note book LED Display DC-DC System LCD Panel Pin Define Pin 1 2 3 4 5 6 Symbol D D G S D D Ordering Information Part Ordering No.
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