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AFP3481S Datasheet P-channel MOSFET

Manufacturer: Alfa-MOS

Overview: Alfa-MOS Technology General.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

AFP3481S, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in mercial industrial surface mount applications.

Pin Description ( TSOT-23-6L ) AFP3481S 30V P-Channel Enhancement Mode MOSFET

Key Features

  • -30V/-5.4A,RDS(ON)=62mΩ@VGS=-10.0V -30V/-4.2A,RDS(ON)=90mΩ@VGS=-4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability TSOT-23-6L package design.

AFP3481S Distributor