Datasheet4U Logo Datasheet4U.com

AFP3485 - P-Channel Enhancement Mode MOSFET

This page provides the datasheet information for the AFP3485, a member of the AFP3485-Alfa P-Channel Enhancement Mode MOSFET family.

Description

AFP3485, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Features

  • -30V/ -12A,RDS(ON)=28mΩ@VGS=-10V -30V/ -10A,RDS(ON)=37mΩ@VGS=-4.5V Super high density cell design for extremely low RDS (ON) TO-252-2L package design.

📥 Download Datasheet

Datasheet preview – AFP3485

Datasheet Details

Part number AFP3485
Manufacturer Alfa-MOS
File Size 756.02 KB
Description P-Channel Enhancement Mode MOSFET
Datasheet download datasheet AFP3485 Datasheet
Additional preview pages of the AFP3485 datasheet.

📁 Similar Datasheet

Other Datasheets by Alfa-MOS

Full PDF Text Transcription

Click to expand full text
Alfa-MOS Technology General Description AFP3485, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( TO-252-2L ) AFP3485 30V P-Channel Enhancement Mode MOSFET Features -30V/ -12A,RDS(ON)=28mΩ@VGS=-10V -30V/ -10A,RDS(ON)=37mΩ@VGS=-4.5V Super high density cell design for extremely low RDS (ON) TO-252-2L package design Application Power Management in Desktop Computer DC/DC Converter LCD Display inverter Pin Define Pin 1 2 3 Symbol G S D Ordering Information Part Ordering No.
Published: |