AFP4943WS Datasheet, Alfa-MOS

-20V/ -9.0A,RDS(ON)=23mΩ@VGS=-4.5V -20V/ -7.0A,RDS(ON)=28mΩ@VGS=-2.5V -20V/ -3.0A,RDS(ON)=35mΩ@VGS=-1.8V Super high density cell design for extremely low RDS (ON) SOP-8P .

Pin Description ( SOP-8P ) AFP4943WS 20V P-Channel Enhancement Mode MOSFET Features -20V/ -9.0A,RDS(ON)=23mΩ@VGS=-4.5V.

AFP4943WS, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial i.