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AFP4953WS - P-Channel MOSFET

This page provides the datasheet information for the AFP4953WS, a member of the AFP4953WS-Alfa P-Channel MOSFET family.

Description

AFS4953WS, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Features

  • -30V/-5.4A,RDS(ON)=50mΩ@VGS=10V -30V/-4.2A,RDS(ON)=75mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) SOP-8P package design.

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Datasheet preview – AFP4953WS

Datasheet Details

Part number AFP4953WS
Manufacturer Alfa-MOS
File Size 592.90 KB
Description P-Channel MOSFET
Datasheet download datasheet AFP4953WS Datasheet
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Full PDF Text Transcription

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Alfa-MOS Technology General Description AFS4953WS, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( SOP-8P ) AFP4953WS 30V P-Channel Enhancement Mode MOSFET Features -30V/-5.4A,RDS(ON)=50mΩ@VGS=10V -30V/-4.2A,RDS(ON)=75mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) SOP-8P package design Application LED Display Load Switch CCFL Inverter Power Management in Notebook Computer Pin Define Pin 1 2 3 4 5 6 7 8 Symbol S1 G1 S2 G2 D2 D2 D1 D1 Ordering Information Part Ordering No.
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