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AFP4943WS - P-Channel MOSFET

This page provides the datasheet information for the AFP4943WS, a member of the AFP4943WS-Alfa P-Channel MOSFET family.

Description

AFP4943WS, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Features

  • -20V/ -9.0A,RDS(ON)=23mΩ@VGS=-4.5V -20V/ -7.0A,RDS(ON)=28mΩ@VGS=-2.5V -20V/ -3.0A,RDS(ON)=35mΩ@VGS=-1.8V Super high density cell design for extremely low RDS (ON) SOP-8P package design.

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Datasheet Details

Part number AFP4943WS
Manufacturer Alfa-MOS
File Size 504.88 KB
Description P-Channel MOSFET
Datasheet download datasheet AFP4943WS Datasheet
Additional preview pages of the AFP4943WS datasheet.

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Full PDF Text Transcription

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Alfa-MOS Technology General Description AFP4943WS, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( SOP-8P ) AFP4943WS 20V P-Channel Enhancement Mode MOSFET Features -20V/ -9.0A,RDS(ON)=23mΩ@VGS=-4.5V -20V/ -7.0A,RDS(ON)=28mΩ@VGS=-2.5V -20V/ -3.0A,RDS(ON)=35mΩ@VGS=-1.8V Super high density cell design for extremely low RDS (ON) SOP-8P package design Application Load Switching - Computer - Game Systems Battery Switching - 2-Cell Li-Ion Pin Define Pin 1 2 3 4 5 6 7 8 Symbol S1 G1 S2 G2 D2 D2 D1 D1 Ordering Information Part Ordering No.
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