AFP4933WS Datasheet | Alfa-MOS

Description AFP4933WS, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in mercial industrial surface mount applications. Pin Description ( SOP-8P ) 20V P-Channel Enhancement Mode MOSFET Features -20V/-6.5A,RDS(ON)=40mΩ@VGS=4.5V -20V/-4.5A,RDS(ON)=54mΩ@VGS=2.5V -20V/-2.5A,RDS(ON)=75mΩ@VGS=1.8V Super high density cell design for extremely low RDS (ON) SOP-8P package design Application Load Switching - puter - Game Systems Battery Switching - 2-Cell Li-Ion Pin Define Pin 1 2 3 4 5 6 7 8 Symbol S1 G1 S2 G2 D2 D2 D1 D1 Ordering Information Part Ordering No. Part Marking Package AFP4933WSS8RG 4933WS SOP-8P ϡʳ A Lot code ϡʳ B Date code ϡʳ AFP4933WSS8RG : 13” Tape & Reel ; Pb- Free ; Halogen- Free ©Alfa-MOS Technology Corp. Rev.A Jan....