AFP4953WS mosfet equivalent, p-channel mosfet.
-30V/-5.4A,RDS(ON)=50mΩ@VGS=10V -30V/-4.2A,RDS(ON)=75mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) SOP-8P package design
Application
LED Display .
Pin Description ( SOP-8P )
AFP4953WS
30V P-Channel Enhancement Mode MOSFET
Features
-30V/-5.4A,RDS(ON)=50mΩ@VGS=10V -3.
AFS4953WS, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial i.
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