AFP4978WS mosfet equivalent, p-channel mosfet.
* -60V/-6A,RDS(ON)= 40mΩ@VGS= -10V
* -60V/-5A,RDS(ON)= 48mΩ@VGS= -4.5V
* Super high density cell design for extremely
low RDS (ON)
* SOP-8P package design.
Pin Description ( SOP-8P )
AFP4978WS
60V P-Channel Enhancement Mode MOSFET
Features
* -60V/-6A,RDS(ON)= 40mΩ@VGS= .
AFP4978WS, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial i.
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