AFP4978WS Description
AFP4978WS, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in mercial industrial surface mount applications. Pin Description ( SOP-8P ) AFP4978WS 60V P-Channel Enhancement Mode MOSFET.
AFP4978WS Key Features
- 60V/-6A,RDS(ON)= 40mΩ@VGS= -10V
- 60V/-5A,RDS(ON)= 48mΩ@VGS= -4.5V
- Super high density cell design for extremely
- SOP-8P package design
- Backlight Inverter for LCD Display
- Full Bridge DC/DC Converter
- Load Switch
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