AFP5010S mosfet equivalent, p-channel enhancement mode mosfet.
-100/-18A,RDS(ON)= 46mΩ@VGS= -10V -100/-10A,RDS(ON)= 52mΩ@VGS= -4.5V Super high density cell design for extremely low RDS (ON) TO-252-2L package design
Application
Power.
Pin Description ( TO-252-2L )
AFP5010S
100 P-Channel Enhancement Mode MOSFET
Features
-100/-18A,RDS(ON)= 46mΩ@VGS= -10.
AFP5010S, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial in.
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