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AFP8473 - P-Channel Enhancement Mode MOSFET

Download the AFP8473 datasheet PDF. This datasheet also covers the AFP8473-Alfa variant, as both devices belong to the same p-channel enhancement mode mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

AFP8473, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Key Features

  • -60V/-4.8A,RDS(ON)= 135mΩ@VGS= -10V -60V/-3.6A,RDS(ON)= 155mΩ@VGS= -4.5V Super high density cell design for extremely low RDS (ON) SOT-223 package design.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AFP8473-Alfa-MOS.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number AFP8473
Manufacturer Alfa-MOS
File Size 573.39 KB
Description P-Channel Enhancement Mode MOSFET
Datasheet download datasheet AFP8473 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Alfa-MOS Technology General Description AFP8473, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( SOT-223 ) AFP8473 60V P-Channel Enhancement Mode MOSFET Features -60V/-4.8A,RDS(ON)= 135mΩ@VGS= -10V -60V/-3.6A,RDS(ON)= 155mΩ@VGS= -4.5V Super high density cell design for extremely low RDS (ON) SOT-223 package design Application Motor and Load Control LCD TV Inverter & AD/DC Inverter Systems.